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US 8,772,910 B2Granted
Doping carbon nanotubes and graphene for improving electronic mobility
AssigneeInternational Business Machines Corporation
InventorsAli Afzali-Ardakani, Bhupesh Chandra, George Stojan Tulevski
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Abstract
A method and an apparatus for doping a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility. The method includes selectively applying a dopant to a channel region of a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility of the field-effect transistor device.
Claims8
An apparatus, comprising:
- a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate with an exposed channel region, wherein the channel region is doped with a dopant to improve electronic mobility and, wherein said dopant comprises at least one of cerium ammonium nitrate and cerium ammonium sulfate;
- and
- contact metal disposed over the doped channel region of the graphene or nanotube thin-film field-effect transistor device.
An apparatus, comprising:
- contact metal;
- and
- a graphene or nanotube thin-film field-effect transistor device fabricated on a substrate and disposed over the contact metal, wherein a channel region of the graphene or nanotube thin-film field-effect transistor device is doped with a dopant to improve electronic mobility and, wherein said dopant comprises at least one of cerium ammonium nitrate and cerium ammonium sulfate.
Dependencies are inferred from the claim text.