Thermally insulated phase change material cells

A memory cell structure, the memory cell structure comprising:

• a bottom electrode comprised of electrically conducting material;
• a dielectric layer above the bottom electrode, the dielectric layer defining a pore;
• phase change material disposed above the bottom electrode and within the pore;
• thermally insulating material lining the pore and positioned between the dielectric layer and the phase change material, the thermally insulating material being in physical contact with both the bottom electrode and the phase change material;
• and
• a top electrode comprised of electrically conducting material;
• and
• wherein the thermally insulating material is disposed, at least partially, between the bottom electrode and the phase change material.