Trench Schottky barrier diode and manufacturing method thereof

A trench Schottky barrier diode (SBD) formed on a first conductive type substrate, comprising:

• a first conductive type substrate;
• a second conductive type epitaxial layer, which is formed on the substrate;
• a plurality of mesas, which are formed by etching the epitaxial layer from an upper surface of the epitaxial layer downward, wherein the etching of the epitaxial layer forms plural trenches;
• a dielectric layer, which is formed on side walls and bottoms of the plural trenches;
• a field plate, which is formed on the epitaxial layer and filled in the plural trenches, wherein the dielectric layer separates the field plate from the side walls and bottoms of the plural trenches, and a Schottky contact is formed between the field plate and top surfaces of the plural mesas;
• a termination region, which is formed outside an edge of the plural mesas and below the upper surface of the epitaxial layer, and is electrically connected to the field plate, wherein the dielectric layer separates the termination region from the epitaxial layer and the edge;
• a field isolation layer, which is formed on the upper surface of the epitaxial layer, and is located outside the termination region;
• and
• at least one mitigation electrode, which is formed below the upper surface of the epitaxial layer and outside the termination region, wherein the field plate is electrically connected to the at least one mitigation electrode through the field isolation layer, and wherein the mitigation electrode and the termination region are separated by part of the dielectric layer and part of the epitaxial layer.