Method and apparatus for backside illumination sensor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShiu-Ko JangJian, Min Hao Hong, Kei-Wei Chen, Ying-Lang Wang
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Abstract
Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.
Claims20
A backside illuminated (BSI) sensor device, comprising:
- a substrate with a front side and a backside;
- a photosensitive diode within the substrate, the photosensitive diode being positioned along the front side of the substrate;
- and
- a B doped Epi-Si(Ge) layer on a surface of the backside of the substrate, wherein the B doped Epi-Si(Ge) layer comprises silicon and germanium.
A backside illuminated (BSI) sensor device, comprising:
- a pixel array in a substrate, wherein the substrate has a front side and a backside, and wherein the substrate comprises a plurality of photosensitive diodes of the pixel array, the photosensitive diodes being positioned in the front side of the substrate;
- a B doped Epi-Si(Ge) layer on a surface of the backside of the substrate, wherein the B doped Epi-Si(Ge) layer comprises silicon and germanium;
- a metal shield layer on the B doped Epi-Si(Ge) layer;
- a dielectric layer on the metal shield layer;
- a micro-lens layer on the B doped Epi-Si(Ge) layer;
- and
- a color filter on the micro-lens layer.
A backside illuminated (BSI) sensor device, comprising:
- a pixel array in a front side of a substrate, wherein the substrate comprises a plurality of photosensitive diodes of the pixel array, a photosensitive diode of the plurality of photosensitive diodes of the pixel array is a pinned layer photodiode comprising a p-n-p junction;
- a B doped Epi-Si(Ge) layer on a surface of a backside of the substrate, wherein the B doped Epi-Si(Ge) layer is an epitaxial layer comprising silicon and germanium;
- a metal shield layer on the B doped Epi-Si(Ge) layer;
- a dielectric layer on the metal shield layer;
- a micro-lens layer on the B doped Epi-Si(Ge) layer;
- and
- a color filter on the micro-lens layer.
Dependencies are inferred from the claim text.