Dark current reduction for back side illuminated image sensor

A semiconductor image sensor device, comprising:

• a semiconductor substrate having a pixel region;
• a radiation-sensing region located in the pixel region;
• a silicon component contiguous with the semiconductor substrate and located outside of the pixel region of the image sensor device;
• an organic component located over a back side of the silicon component and located outside of the pixel region of the image sensor device;
• and
• an interconnect structure located over a front side of the silicon component;
• wherein the silicon component and the organic component are located in a scribe-line region of the semiconductor substrate, and wherein the silicon component has a substantially similar material composition as the semiconductor substrate and is free of a dielectric material.

A semiconductor image device, comprising:

• a radiation-sensing element disposed in a semiconductor substrate, the radiation-sensing element being configured to detect radiation that enters the semiconductor substrate from a back side of the semiconductor device, wherein the radiation-sensing element is disposed within a pixel-region of the semiconductor device;
• a semiconductor element disposed adjacent to the semiconductor substrate, wherein the semiconductor element and the semiconductor substrate have substantially identical material compositions, and wherein the semiconductor element is disposed in a scribe-line region of the semiconductor device;
• an organic element disposed over the semiconductor element in the back side, wherein the organic element is disposed in the scribe-line region of the semiconductor device;
• and
• an interconnect structure disposed over a front side of the semiconductor device.