Trench process and structure for backside contact solar cells with polysilicon doped regions
AssigneeSunPower Corporation
InventorDavid D. Smith
Life of this patent
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Abstract
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.
Claims15
A solar cell comprising:
- a solar cell substrate having a front side configured to face the sun during normal operation and a backside opposite the front side;
- a P-type doped region and an N-type doped region of the solar cell over the backside of the solar cell substrate;
- a first dielectric layer between the solar cell substrate and the P-type and N-type doped regions;
- and
- a trench structure separating the P-type doped region and the N-type doped region, and dividing the first dielectric layer.
A solar cell comprising:
- a P-type doped region and an N-type doped region formed on a backside of a solar cell substrate, each of the P-type and N-type doped regions being formed over a first dielectric layer;
- and
- a trench structure separating the P-type doped region and the N-type doped region, and dividing the first dielectric layer.
Dependencies are inferred from the claim text.