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US 8,772,889 B2Granted
Magnetic domain wall shift register memory device readout
AssigneeInternational Business Machines Corporation
InventorsMichael C. Gaidis, Alexander J. Gaidis
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Abstract
A memory device includes a first nanowire, a second nanowire and a magnetic tunnel junction device coupling the first and second nanowires.
Claims10
A memory device, comprising:
- a first nanowire;
- a second nanowire;
- and
- a magnetic tunnel junction (MTJ) device coupling the first and second nanowires, the MTJ device disposed between the first and second nanowires, and wherein the MTJ device comprises a first MTJ disposed on the first nanowire, a second MTJ disposed on the second nanowire and a common reference layer disposed between the first and second MTJs.
1 more element
Dependencies are inferred from the claim text.