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US 8,772,882 B2Granted
Semiconductor device and method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorKazuhiko Takada
Life of this patent
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Abstract
A conductive film having a first width in a first direction, an ONO film, and a control gate are formed above a tunnel gate insulating film. With the control gate as a mask, the conductive film is etched to form a floating gate. Then, an inter-layer insulating film is formed. A contact hole whose width in the first direction is larger than the first width is formed in the inter-layer insulating film. Then, sidewall spacer is formed on an inside wall of the contact hole.
Claims3
A semiconductor device comprising:
- a device isolation film defining a device region formed in a semiconductor substrate;
- a memory cell transistor including a first insulating film formed above the device region;
- a floating gate formed above the first insulating film and having a first width in a first direction;
- a second insulating film formed above the floating gate;
- and a control gate formed above the floating gate with the second insulating film interposed therebetween and extended in the first direction;
- a third insulating film formed above the semiconductor substrate with the memory cell transistor formed, the third insulating film having a contact hole reaching down to the device region, the contact hole having a second width in the first direction;
- a fourth insulating film formed on a inside wall of the contact hole;
- a contact plug formed in the contact hole with the fourth insulating film formed;
- and
- a bit line connected to the contact plug and extended in the second direction.
7 more elements
Dependencies are inferred from the claim text.