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AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsJean-Luc Huguenin, Stéphane Monfray
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An electronic component including a number of insulated-gate field effect transistors, said transistors belonging to at least two distinct subsets by virtue of their threshold voltage, wherein each transistor includes a gate that has two electrodes, namely a first electrode embedded inside the substrate where the channel of the transistor is defined and a second upper electrode located above the substrate facing buried electrode relative to channel and separated from said channel by a layer of dielectric material and wherein the embedded electrodes of all the transistors are formed by an identical material, the upper electrodes having a layer that is in contact with the dielectric material which is formed by materials that differ from one subset of transistors to another.
Electronic component comprising a number of insulated-gate field effect transistors, said transistors belonging to at least two distinct subsets by virtue of their threshold voltage, wherein each transistor has two gates, namely a first gate embedded in the substrate where the channel of the transistor is defined and separated from said channel by a layer of dielectric material and a second upper gate located above the substrate and facing buried gate relative to channel, with the upper gates having a layer that is in contact with a single stack of dielectric material which is formed by materials that differ from one transistor to another and wherein the buried gates of the set of transistors are formed by an identical material.
Method for manufacturing a number of insulated-gate field effect transistors on a semiconductor substrate which involves:
Dependencies are inferred from the claim text.