Ge-on-insulator structure and method for forming the same
AssigneeTsinghua University
InventorsJing Wang, Jun Xu, Lei Guo
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Abstract
A method for forming a Ge-on-insulator structure is provided, comprising steps of: forming a Ge layer (1200) on a substrate (2000); treating a first surface of the Ge layer (1200) to form a first semiconducting metal-germanide passivation layer (1300); bonding the first semiconducting metal-germanide passivation layer (1300) with a silicon substrate (1100), wherein on a surface of the silicon substrate (1100) an oxide insulating layer is formed; and removing the substrate (2000). Further, a Ge-on-insulator structure formed by the method is also provided.
Claims14
A method for forming a Ge-on-insulator structure, comprising steps of:
- forming a Ge layer on a substrate;
- treating a first surface of the Ge layer to form a first semiconducting metal-germanide passivation layer;
- bonding the first semiconducting metal-germanide passivation layer with a silicon substrate, wherein on a surface of the silicon substrate an oxide insulating layer is formed;
- and
- removing the substrate.
A Ge-on-insulator structure, comprising:
- a silicon substrate, wherein on a surface of the silicon substrate an oxide insulating layer is formed;
- and
- a Ge layer formed on the silicon substrate,
- wherein a first semiconducting metal-germanide passivation layer is formed between the Ge layer and the silicon substrate.
Dependencies are inferred from the claim text.