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US 8,772,856 B2Granted
Charge storage nodes with conductive nanodots
AssigneeMicron Technology, Inc.
InventorNirmal Ramaswamy
Life of this patent
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Abstract
Memory cells formed to include a charge storage node having conductive nanodots over a charge storage material are useful in non-volatile memory devices and electronic systems.
Claims20
A memory cell, comprising:
- a first dielectric over a semiconductor;
- a charge storage node over the first dielectric;
- a second dielectric over the charge storage node;
- a control gate over the second dielectric;
- and
- source/drain regions in the semiconductor generally adjacent the first dielectric;
- wherein the charge storage node comprises a charge storage material and conductive nanodots;
- and
- wherein the conductive nanodots are between the charge storage material and the second dielectric.
6 more elements
A memory cell, comprising:
- a tunnel dielectric over a semiconductor;
- a silicon-containing charge storage material over the tunnel dielectric;
- a nitridized barrier over the silicon-containing charge storage material;
- metal-containing nanodots over the nitridized barrier;
- an intergate dielectric over the metal-containing nanodots;
- a control gate over the intergate dielectric;
- and
- source/drain regions in the semiconductor generally adjacent the tunnel dielectric.
5 more elements
A memory device, comprising:
- an array of non-volatile memory cells;
- and
- circuitry configured to control and/or access the array of non-volatile memory cells;
- wherein at least one of the non-volatile memory cells comprises a charge storage node which comprises a charge storage material and conductive nanodots;
- and
- wherein the conductive nanodots of the charge storage node are between the charge storage material and a control gate of the at least one of the non-volatile memory cells.
3 more elements
A memory device, comprising:
- an array of non-volatile memory cells;
- and
- circuitry configured to control and/or access the array of non-volatile memory cells;
- wherein at least one of the non-volatile memory cells comprises a charge storage node which comprises a charge storage material and conductive nanodots;
- wherein the conductive nanodots of the charge storage node are between the charge storage material and a control gate of the at least one of the non-volatile memory cells;
- wherein the charge storage node further comprises a barrier between the charge storage material and the conductive nanodots;
- wherein the charge storage material is a silicon-containing material selected from the group consisting of undoped or conductively doped monocrystalline silicon, undoped or conductively doped amorphous silicon and undoped or conductively doped polycrystalline silicon;
- wherein the barrier is a silicon-containing dielectric material selected from the group consisting of a silicon oxide, a silicon nitride and a silicon oxynitride;
- wherein the conductive nanodots comprise metal-containing nanodots comprising at least one metal-containing material selected from the group consisting of elemental metals, metal alloys, metal nitrides and metal silicides;
- and
- wherein metals of the elemental metals, metal alloys, metal nitrides and metal silicides of the at least one metal-containing material are selected from the group consisting of titanium, tantalum, tungsten, ruthenium, rhodium, and platinum.
8 more elements
A memory device, comprising:
- an array of non-volatile memory cells;
- and
- circuitry configured to control and/or access the array of non-volatile memory cells;
- wherein at least one of the memory cells comprises a gate stack having a tunnel dielectric over a semiconductor channel, a charge storage node over the tunnel dielectric, an intergate dielectric over the charge storage node and a control gate over the intergate dielectric, and wherein the charge storage node comprises a silicon-containing charge storage material, metal-containing nanodots and a silicon-containing barrier between the silicon-containing charge storage material and the metal-containing nanodots.
1 more element
Dependencies are inferred from the claim text.