Semiconductor device including resistor and method of fabricating the same

A semiconductor device, comprising:

• a trench structure disposed on a semiconductor substrate, the trench structure including upper surfaces, wall surfaces, and a lower surface defining a trench;
• a resistance pattern disposed on the trench structure, the resistance pattern including:
• a body region covering at least a portion of the wall surfaces and the lower surface of the trench, and
• first and second contact regions respectively covering the upper surfaces of the trench structure, wherein the body region is electrically coupled to the first and second contact regions of the resistance pattern, and bottom surfaces of the first and second contact regions are higher than a bottom surface of a middle portion of the body region;
• and
• first and second lines contacting the first and second contact regions, respectively, wherein the resistance pattern defines a gap region between facing portions of the body region, and the first and second contact regions are below the respective first and second lines.

A semiconductor device, comprising:

• a semiconductor substrate;
• a resistance pattern on the semiconductor substrate;
• first and second contact regions on sides of the resistance pattern;
• a body region formed between the first and second contact regions and recessed into the semiconductor substrate;
• an insulation layer covering the body region and exposing top surfaces of the first and second contact regions;
• first and second conductive patterns on the exposed top surfaces of the respective first and second contact regions, the first and second conductive patterns providing a lower resistivity than a resistivity of the body region,
• bottom surfaces of the first and second contact regions are higher than a bottom surface of a middle portion of the body region, and
• the first and second contact regions are below respective first and second lines contacting the first and second contact regions respectively.