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US 8,772,847 B2Granted
Semiconductor device and method for producing the same
AssigneeFujitsu Semiconductor Limited
InventorNaoya Sashida
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate; a first insulating film that is formed over the semiconductor substrate; a capacitor that is formed over the first insulating film and is formed by sequentially stacking a lower electrode, a capacitor dielectric film, and an upper electrode; a second insulating film that is formed over the capacitor and has a hole including the entire region of the upper electrode in plan view; and a conductor plug that is formed in the hole and contains tungsten.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a first insulating film that is formed over the semiconductor substrate;
- a capacitor that is formed over the first insulating film and is formed by sequentially stacking a lower electrode, a capacitor dielectric film, and an upper electrode;
- a second insulating film that is formed over the capacitor and has a hole including the entire region of the upper electrode in plan view;
- and
- a conductor plug that is formed in the hole and contains tungsten.
3 more elements
A method for producing a semiconductor device comprising:
- forming a first insulating film on a semiconductor substrate;
- forming, on the first insulating film, a capacitor by sequentially stacking a lower electrode, a capacitor dielectric film, and an upper electrode;
- forming a second insulating film that covers the capacitor;
- forming a hole in the second insulating film by pattering the second insulating film, the hole including the entire region of the upper electrode in plan view;
- and
- forming, in the hole, a conductor plug that is electrically connected to the upper electrode and that contains tungsten.
3 more elements
Dependencies are inferred from the claim text.