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US 8,772,846 B2Granted
Magnetic tunneling junction devices, memories, memory systems, and electronic devices
AssigneeSamsung Electronics Co., Ltd.
InventorsJeong Heon Park, Woo Chang Lim, Sechung Oh, Young Hyun Kim, Sang Hwan Park, Jang Eun Lee
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Abstract
Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
Claims29
A magnetic tunneling junction device comprising:
- a first structure including a magnetic layer;
- a second structure including
- at least two extrinsic perpendicular magnetization structures, each including
- a magnetic layer and;
- a perpendicular magnetization inducing layer on the magnetic layer;
- and
- a tunnel barrier between the first and second structures.
4 more elements
Dependencies are inferred from the claim text.