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US 8,772,841 B2Granted
Reactive metal implated oxide based memory
AssigneeMicron Technology, Inc.
InventorsD.V. Nirmal Ramaswamy, Gurtej S. Sandhu
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Abstract
Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming an oxide over the first conductive element, implanting a reactive metal into the oxide, and forming a second conductive element over the oxide.
Claims17
An oxide based memory cell, comprising:
- a first conductive element;
- a second conductive element;
- and
- an oxide between the first conductive element and the second conductive element, wherein the oxide is implanted with a metal, between the first conductive element and the second conductive element, that is reactive with respect to the oxide;
- wherein the oxide is implanted with a first metal that is reactive with respect to the oxide and a second metal that is reactive with respect to the oxide, and wherein the first metal and the second metal include different activation energies for oxygen ion diffusion so as to form a portion of the memory cell over the oxide.
2 more elements
An oxide based memory cell, comprising:
- a first conductive element;
- a second conductive element;
- an oxide between the first conductive element and the second conductive element, wherein the oxide is implanted with a first metal that is reactive with respect to the oxide and
- a second metal, which is reactive with respect to the oxide, between the oxide and the second conductive element;
- wherein the memory cell includes a graded tunnel barrier in a portion of the oxide proximal to the second metal, wherein the graded tunnel barrier includes a first portion having first activation energy for oxygen ion diffusion and a second portion having a second activation energy for oxygen ion diffusion different than the first activation energy.
2 more elements
An oxide based memory cell, comprising:
- a first conductive element;
- a second conductive element;
- an oxide between the first conductive element and the second conductive element;
- and
- a graded tunnel barrier in a portion of the oxide proximal to the second conductive element, wherein the graded tunnel barrier includes a first portion having a first activation energy for oxygen ion diffusion and a second portion having a second activation energy for oxygen ion diffusion different than the first activation energy;
- wherein the memory cell includes a sub-oxide in the oxide proximal to the second conductive element in response to the second conductive element being biased with a positive voltage relative to the first conductive element.
3 more elements
Dependencies are inferred from the claim text.