Semiconductor device comprising a lateral bipolar transistor

A semiconductor device comprising a lateral bipolar transistor,

• the lateral bipolar transistor including:
• a substrate including a first conductive layer;
• an active region located on the first conductive layer and having such a shape as to protrude from the first conductive layer and have an upper surface and at least one side surface in contact with the upper surface;
• and
• a device isolating oxide film partially covering the side surface of the active region,
• wherein the active region includes a second conductive layer having a polarity different from that of the first conductive layer, and
• wherein the active region includes a third conductive layer having the same polarity as that of the first conductive layer at two opposing positions of the upper surface and said at least one side surface,
• wherein the third conductive layer includes a fourth conductive layer having the same polarity as that of the second conductive layer,
• wherein the fourth conductive layer is connected to an emitter electrode,
• further comprising at least two collector contact electrodes, wherein the active region is electrically connected to said at least two collector contact electrodes, and said at least two collector contact electrodes are arranged in such a manner that a line connecting said at least two collector contact electrodes is substantially orthogonal to another line connecting said two opposing positions of said at least one side surface.