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US 8,772,835 B2Granted
Lateral high electron mobility transistor with Schottky junction
AssigneeInfineon Technologies Austria AG
InventorsMarkus Zundel, Franz Hirler
Life of this patent
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Abstract
A lateral HEMT includes a first semiconductor layer on a second semiconductor layer, a heterojunction at an interface between the first semiconductor layer and the second semiconductor layer, and a rectifying Schottky junction. The rectifying Schottky junction has a first terminal electrically coupled to a source electrode and a second terminal electrically coupled to the second semiconductor layer.
Claims25
A lateral HEMT, comprising:
- a first semiconductor layer on a second semiconductor layer;
- a heterojunction at an interface between the first semiconductor layer and the second semiconductor layer;
- and
- a rectifying Schottky junction having a first terminal electrically coupled to a source electrode and a second terminal electrically coupled to the second semiconductor layer.
1 more element
A lateral HEMT, comprising:
- a first semiconductor layer on a second semiconductor layer;
- a heterojunction at an interface between the first semiconductor layer and the second semiconductor layer;
- a Schottky junction including a Schottky contact metal on the second semiconductor layer, the Schottky contact metal being electrically coupled to a source electrode;
- and
- wherein a shortest lateral distance between a gate electrode and a drain electrode is larger than the shortest lateral distance between the Schottky junction and the drain electrode.
2 more elements
A lateral HEMT, comprising:
- a first semiconductor layer on a second semiconductor layer;
- a heterojunction at an interface between the first semiconductor layer and the second semiconductor layer;
- a rectifying Schottky junction having a first terminal electrically coupled to a source electrode and a second terminal electrically coupled to the second semiconductor layer;
- a passivation layer above the second semiconductor layer;
- a drift region having a lateral width wd;
- and
- at least one field plate arranged at least partially on the passivation layer in a region of the drift region and having a lateral width wf, wherein wf<wd.
4 more elements
Dependencies are inferred from the claim text.