High electron mobility transistor and method of driving the same

A high electron mobility transistor (HEMT) comprising:

• a channel layer including a first semiconductor material;
• a channel supply layer on the channel layer,
• the channel supply layer including a second semiconductor material,
• the channel supply layer configured to induce a two-dimensional electron gas (2DEG) in the channel layer;
• a source electrode and a drain electrode at both sides of the channel supply layer;
• a depletion-forming layer on the channel supply layer,
• the depletion-forming layer configured to form a depletion region in the 2DEG;
• a first gate electrode on the depletion-forming layer,
• the first gate electrode between the source electrode and the drain electrode;
• and
• at least one second gate electrode separated from the first gate electrode on the depletion-forming layer and between the source electrode and the drain electrode.