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US 8,772,829 B2Granted
Zinc-oxide based epitaxial layers and devices
AssigneeKey Trans Investments, LLC
InventorsBunmi T. Adekore, Jonathan Pierce
Life of this patent
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Abstract
Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided.
Claims28
A method of forming a zinc-oxide based epitaxial layer, the method comprising:
- providing a vicinal wurtzite substrate, wherein the vicinal wurtzite substrate includes an off-cut slice of a hexagonal crystal, and wherein the off-cut slice is offset from a principal crystallographic plane of the hexagonal crystal;
- and
- forming a zinc-oxide based epitaxial layer on the vicinal wurtzite substrate using metalorganic chemical vapor deposition.
A method of forming a zinc-oxide based epitaxial layer, the method comprising:
- providing a wurtzite substrate, wherein the wurtzite substrate is a zinc-oxide based substrate and
- forming a zinc-oxide based epitaxial layer on the wurtzite substrate using metalorganic chemical vapor deposition.
A method of forming a zinc-oxide based epitaxial layer, the method comprising:
- providing a wurtzite substrate, wherein the wurtzite substrate is a zinc-oxide based substrate;
- and
- forming a zinc-oxide based epitaxial layer on the wurtzite substrate using metalorganic chemical vapor deposition, wherein the zinc-oxide based epitaxial layer further comprises at least one element selected from the group consisting of gold, silver, and potassium.
An apparatus comprising:
- a vicinal wurtzite substrate, wherein the vicinal wurtzite substrate includes an off-cut slice of a hexagonal crystal, and wherein the off-cut slice is offset from a principal crystallographic plane of the hexagonal crystal;
- and
- a zinc-oxide based epitaxial layer deposited on the vicinal wurtzite substrate.
An apparatus comprising:
- a semi-polar wurtzite substrate, wherein the semi-polar wurtzite substrate includes an off-cut slice of a hexagonal crystal, and wherein the off-cut slice is offset from a principal crystallographic plane of the hexagonal crystal, and wherein the semi-polar wurtzite substrate comprises at least one plane selected from the group consisting of a (10-11) plane, a (10-1-1) plane, (10-12), a (10-1-2) plane, a (11-2-1) plane, a (11-21) plane, a (11-2-2) plane, and a (11-22) plane;
- and
- a zinc-oxide based epitaxial layer deposited on the semi-polar wurtzite substrate.
Dependencies are inferred from the claim text.