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US 8,772,825 B2Granted
Stacked semiconductor device and a method of manufacturing the same
AssigneePhostek, Inc.
InventorsJinn Kong Sheu, Wei-Chih Lai
Life of this patent
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Abstract
A stacked semiconductor device and an associated manufacturing method are disclosed. A first semiconductor unit having a first surface, which is defined as being not a polar plane, is provided. At least one pit is formed on the first surface, and the pit has a second surface that lies at an angle relative to the first surface. A polarization enhanced tunnel junction is formed on the second surface, and a second semiconductor unit is formed above the tunnel junction.
Claims27
A method of manufacturing a stacked semiconductor device, comprising;
- providing a first semiconductor unit having a first surface that is not a polar plane;
- forming at least one pit from the first surface, the pit having a second surface that lies at an angle relative to the first surface;
- forming a polarization enhanced tunnel junction on the second surface;
- and
- forming a second semiconductor unit above the tunnel junction, whereby the at least one pit enhances the polarization of the tunnel junction.
2 more elements
A stacked semiconductor device, comprising;
- a first semiconductor unit having a first surface that is not a polar plane;
- a second semiconductor unit formed above the first semiconductor unit;
- at least one pit formed from the first surface, the pit having a second surface that lies at an angle relative to the first surface;
- and a polarization enhanced tunnel junction formed on the second surface and in between the first semiconductor unit and the second semiconductor unit, whereby the at least one pit enhances the polarization of the tunnel junction.
1 more element
Dependencies are inferred from the claim text.