Back to results
US 8,772,815 B2Granted
Semiconductor light emitting device having a protecting member and method of fabricating the same
AssigneeLG Innotek Co., Ltd.
InventorHwan Hee Jeong
Life of this patent
Estimating the term…
Abstract
A semiconductor light emitting device has a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, and a nitride semiconductor layer on side surfaces of the second conductive semiconductor layer along an outer periphery of the second conductive semiconductor layer. An ohmic layer directly contacts the second conductive semiconductor layer and the nitride semiconductor layer.
Claims3
A semiconductor light emitting device comprising:
- a first conductive semiconductor layer;
- an active layer on top and side surfaces of the first conductive semiconductor layer;
- a second conductive semiconductor layer on top and side surfaces of the active layer;
- a semiconductor layer having a nitride material on side surfaces of the second conductive semiconductor layer along an outer periphery of the second conductive semiconductor layer;
- a conductive layer directly contacting the second conductive semiconductor layer and the semiconductor layer having the nitride material;
- and
- a conductive substrate on the conductive layer,
- wherein a portion of a bottom surface of the semiconductor layer is coplanar with a bottom surface of the first conductive semiconductor layer,
- wherein the conductive layer is disposed between the semiconductor layer and the conductive substrate, and
- wherein light from the active layer is emitted to the outside from a bottom surface of the first conductive semiconductor layer.
7 more elements
Dependencies are inferred from the claim text.