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US 8,772,811 B2Granted
Light emitting diode
AssigneeAdvanced Optoelectronic Technology, Inc.
InventorsTzu-Chien Hung, Shun-Kuei Yang, Chia-Hui Shen
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Abstract
A light emitting diode and a light emitting diode (LED) manufacturing method are disclosed. The LED comprises a substrate; a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga—N bonds on the bottom surface has an N-face polarity.
Claims6
An LED comprising:
- a substrate;
- a first n-type GaN layer;
- a second n-type GaN layer;
- an active layer;
- and a p-type GaN layer formed on the substrate in sequence;
- the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga—N bonds on the bottom surface has an N-face polarity.
3 more elements
Dependencies are inferred from the claim text.