Semiconductor light emitting device and method for manufacturing the same

A semiconductor light emitting device, comprising:

• a semiconductor layer including a first face, a second face opposite to the first face, a side face, and a light emitting layer;
• a p-side electrode provided on the second face;
• an n-side electrode provided on the side face;
• a first p-side metal layer provided on the p-side electrode and connected electrically with the p-side electrode;
• a first n-side metal layer provided in a region peripheral to the semiconductor layer and connected electrically with the n-side electrode, the first n-side metal layer having a first portion and a second portion that are at opposite sides of the first p-side metal layer;
• a first insulating layer provided on the first portion of the first n-side metal layer;
• a second p-side metal layer provided on the first p-side metal layer and connected electrically with the first p-side metal layer, the second p-side metal layer overlapping the first portion of the first n-side metal layer via the first insulating layer in a direction perpendicular to the first face;
• and
• a second n-side metal layer provided on the second portion of the first n-side metal layer, the second n-side metal layer connected electrically to the first n-side metal layer.