Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a light emitting layer;
• a first electrode including a reflection metal layer;
• a first conductivity type layer between the light emitting layer and the first electrode:
• a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite the first surface;
• a second electrode on the second surface of the second conductivity type layer;
• a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer;
• and
• a support substrate on which the first electrode is disposed,
• the first electrode further including a bonding metal layer between the support substrate and the reflection metal layer, the bonding metal layer having a light reflectance that is less than a light reflectance of the reflection metal layer.

A semiconductor light emitting device comprising:

• a light emitting layer;
• a first electrode including a reflection metal layer and a transparent conductive layer;
• a first conductivity type layer between the light emitting layer and the transparent conductive layer of the first electrode;
• a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite the first surface;
• a second electrode provided on the second surface of the second conductivity type layer;
• and
• a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer,
• the first concave-convex structures on at least part of an interface of the first conductive type layer and the transparent conductive layer.

A semiconductor light emitting device comprising:

• a light emitting layer;
• a first electrode including a reflection metal layer and a transparent conductive layer;
• a first conductivity type layer provided between the light emitting layer and the transparent conductive layer of the first electrode;
• a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite side first surface;
• a second electrode provided on the second surface of the second conductivity type layer;
• a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer;
• and
• a support substrate on which the first electrode is disposed,
• the first electrode further including a bonding metal layer between the support substrate and the reflection metal layer, the bonding metal layer having a light reflectance that is less than a light reflectance of the reflection metal layer, and
• the light emitting layer, the first conductivity type layer, and the second conductivity type layer including one of Inx(AlyGa1-y)1-xP(0≦x≦1, 0≦y≦1),AlxGa1-xAs(0≦x≦1), and InxAlyGa1-x-yN(0≦x≦1, 0≦y≦1, x+y≦1).

A semiconductor light emitting device comprising:

• a light emitting layer;
• a first electrode including a reflection metal layer and a transparent conductive layer;
• a first conductivity type layer between the light emitting layer and the transparent conductive layer;
• a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite the first surface;
• a second electrode on the second surface of the second conductivity type layer;
• an insulating layer between the first conductivity type layer and the first electrode and having openings;
• and
• a plurality of first concave-convex structures on at least a portion of a surface of first conductivity type layer that is between the first conductivity type layer and the reflection metal layer.

A semiconductor light emitting device comprising:

• a light emitting layer;
• a first electrode including a reflection metal layer;
• a first conductivity type layer between the light emitting layer and the first electrode:
• a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite the first surface;
• a second electrode on the second surface of the second conductivity type layer;
• and
• a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer,
• the surface of the first conductivity type layer comprising a first region having first concave-convex structures and a second region not having first concave-convex structures,
• the first region including all portions of the surface of the first conductivity type layer which overlap the second electrode when viewed from a direction orthogonal to a plane in which the second electrode is disposed, and
• the second region including only portions of the surface of the first conductivity type layer which do not overlap with second electrode when viewed from the direction orthogonal to the plane in which the second electrode is disposed.

A semiconductor light emitting device comprising:

• a light emitting layer;
• a first electrode including a reflection metal layer;
• a first conductivity type layer between the light emitting layer and the first electrode:
• a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite the first surface;
• a second electrode on the second surface of the second conductivity type layer;
• a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer;
• and
• a plurality of second concave-convex structures on the second surface of the second conductivity type layer, the second concave-convex structures only on portions of the second surface which do not overlap with the second electrode when viewed from a direction orthogonal to a plane in which the second electrode is disposed.

A semiconductor light emitting device comprising:

• a light emitting layer;
• a first electrode including a reflection metal layer and a transparent conductive layer;
• a first conductivity type layer provided between the light emitting layer and the transparent conductive layer of the first electrode;
• a second conductivity type layer having a first surface on a light emitting layer side and a second surface on a side opposite side first surface;
• a second electrode provided on the second surface of the second conductivity type layer;
• a plurality of first concave-convex structures on at least a portion of a surface of the first conductivity type layer that is between the first conductivity type layer and the reflection metal layer;
• and
• a plurality of second concave-convex structures on the second surface of the second conductivity type layer, the second concave-convex structures only on portions of the second surface which do not overlap with the second electrode when viewed from a direction orthogonal to a plane in which the second electrode is disposed.