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US 8,772,808 B2Granted
Semiconductor light emitting element and manufacturing method thereof
AssigneeStanley Electric Co., Ltd.
InventorsYasuyuki Shibata, Ji-Hao Liang, Jiro Higashino
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Abstract
A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.
Claims1
A semiconductor light emitting element, comprising:
- a semiconductor laminated body including an active layer;
- an electrode formed on said semiconductor laminated body to supply a current to said active layer, the electrode comprising a metal film;
- a cap layer formed over said semiconductor laminated body and said electrode, wherein said cap layer comprises a multilayered film consisting of a plurality of individual metal layers;
- a wave-like bend having a multilayer structure integrated with the multilayered film of said cap layer at an edge portion of said cap layer, wherein the multilayered structure is folded back on itself to form a folded protrusion, and wherein the folded protrusion surrounds an edge of the metal film of said electrode and contacts the semiconductor laminated body;
- a bonding layer formed over said cap layer and the multilayered structure;
- and
- a support substrate to support said semiconductor laminated body via said bonding layer.
4 more elements
Dependencies are inferred from the claim text.