Semiconductor light-emitting diode and method for producing a semiconductor light-emitting diode

A semiconductor light-emitting diode comprising:

• at least one p-doped light-emitting diode layer, an n-doped light-emitting diode layer and an optically active zone between the p-doped light-emitting diode layer and the n-doped light-emitting diode layer;
• an oxide layer of a transparent conductive oxide;
• and
• at least one mirror layer comprising reflective material including at least one dielectric mirror layer;
• wherein the oxide layer is disposed between the light-emitting diode layers and the at least one mirror layer, and comprises a first boundary surface facing the light-emitting diode layers and a second boundary surface directly adjoining at least a portion of the reflective material of the at least one mirror layer, and
• wherein the second boundary surface of the oxide layer has a roughness which is less than 1.0 nm.

A method for producing a semiconductor light-emitting diode, wherein the method comprises the steps of:

• forming at least one p-doped light-emitting diode layer and an n-doped light-emitting diode layer;
• depositing a transparent conductive oxide, wherein an oxide layer is formed which comprises a first boundary surface facing the light-emitting diode layers, wherein the oxide layer is deposited by means of HF-assisted DC sputtering and in doing so producing a second boundary surface of the oxide layer opposing the first boundary surface having less roughness than the first boundary surface of the oxide layer;
• and
• forming at least one mirror layer including at least one dielectric mirror layer on the second boundary surface of the oxide layer.