Back to results
US 8,772,803 B2Granted
Semiconductor light-emitting device and method for fabricating the same
AssigneeLG Innotek Co., Ltd.
InventorsHwan Hee Jeong, Sang Youl Lee, June O Song, Kwang Ki Choi
Life of this patent
Estimating the term…
Abstract
A semiconductor light-emitting device is provided that may include an electrode layer, a light-emitting structure including a compound semiconductor layer on the electrode layer, and an electrode on the light-emitting structure, wherein the electrode includes an ohmic contact layer that contacts the compound semiconductor layer, a first barrier layer on the ohmic contact layer, a conductive layer including copper on the first barrier layer, a second barrier layer on the conductive layer, and a bonding layer on the second barrier layer.
Claims20
A semiconductor light-emitting device, comprising:
- an electrode layer;
- a light-emitting structure, the light-emitting structure comprising a plurality of semiconductor layers wherein an uppermost layer of the plurality of semiconductor layers comprises a N type semiconductor layer;
- a channel layer along an edge of the electrode layer and having a top surface and a bottom surface opposite to each other and parallel to each other;
- an adhesion layer under the electrode layer;
- and
- an electrode on the light-emitting structure, wherein the electrode comprises:
- an ohmic contact layer that directly contacts a top surface of the N-type semiconductor layer;
- a first barrier layer on the ohmic contact layer;
- a conductive layer comprising copper on the first barrier layer;
- a second barrier layer on the conductive layer;
- and
- a bonding layer on the second barrier layer, wherein the top surface of the channel layer is spaced apart from a side surface of the uppermost layer of the plurality of semiconductor layers, and wherein at least a portion of the top surface of the channel layer extends horizontally from a side surface of the light-emitting structure toward a side surface of the adhesion layer.
9 more elements
A semiconductor light-emitting device, comprising:
- an electrode layer;
- a light-emitting structure above the electrode layer, the light-emitting structure comprising a plurality of semiconductor layers;
- a channel layer along an edge of the electrode layer and having a top surface and a bottom surface opposite to each other and parallel to each other;
- an adhesion layer under the electrode layer;
- and
- an electrode on the light-emitting structure, wherein the electrode comprises:
- an ohmic contact layer that contacts a top surface of the plurality of semiconductor layers and comprising a single layer including Ti;
- a first barrier layer on the ohmic contact layer;
- a conductive layer comprising copper on the first barrier layer;
- a second barrier layer on the conductive layer;
- and
- a bonding layer on the second barrier layer, wherein an uppermost layer of the plurality of semiconductor layers comprises a N type semiconductor layer, and wherein the ohmic contact layer directly contacts a surface of the N type semiconductor layer thereof, and wherein at least a portion of the top surface of the channel layer extends horizontally from a side surface of the light-emitting structure toward a side surface of the adhesion layer.
9 more elements
A semiconductor light-emitting device, comprising:
- an electrode layer;
- a light-emitting structure above the electrode layer, the light-emitting structure comprising a plurality of semiconductor layers;
- an electrode on the light-emitting structure, wherein the electrode comprises:
- an ohmic contact layer that contacts a top surface of the plurality of semiconductor layers;
- a first barrier layer on the ohmic contact layer;
- a conductive layer comprising copper on the first barrier layer;
- a second barrier layer on the conductive layer;
- and
- a bonding layer on the second barrier layer,
- an adhesion layer under the electrode layer;
- an ohmic layer between the electrode layer and the plurality of semiconductor layers;
- a channel layer along a bottom edge of the plurality of semiconductor layers;
- and
- a current blocking layer between the ohmic layer and the plurality of semiconductor layers, wherein the current blocking layer is formed of a non-metal material having an electrical conductivity lower than the ohmic layer.
11 more elements
Dependencies are inferred from the claim text.