Nitride semiconductor light-emitting element, nitride semiconductor light-emitting device, and method of manufacturing nitride semiconductor light-emitting element

A nitride semiconductor light-emitting device comprising:

• a nitride semiconductor light-emitting element including:
• a substrate;
• a nitride semiconductor multilayer portion provided on the substrate and having a light-emitting layer;
• and a current diffusion layer provided on the nitride semiconductor multilayer portion;
• a package substrate on which the nitride semiconductor light-emitting element is mounted;
• and
• an optically transparent resin sealing portion that seals the nitride semiconductor light-emitting element mounted on the package substrate,
• wherein an air gap layer is formed in at least one of an area between the substrate and the light-emitting layer in the nitride semiconductor light-emitting element, an area between the light-emitting layer and the current diffusion layer in the nitride semiconductor light-emitting element and an area on an upper surface of the current diffusion layer, and/or formed in an area in the package substrate,
• a thickness of the air gap layer is approximately an odd multiple of one-fourth of a wavelength of light emitted from the light-emitting layer.