Back to results
US 8,772,787 B2Granted
Prepared and stored GaN substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorsHideyuki Ijiri, Seiji Nakahata
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeSumitomo Electric Industries, Ltd.
InventorsHideyuki Ijiri, Seiji Nakahata
Estimating the term…
A GaN substrate is stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3. The GaN substrate (1) has a planar first principal face (1m), and in an arbitrary point (P) along the first principal face (1m) and separated 3 mm or more from the outer edge thereof, the GaN substrate's plane orientation has an off-inclination angle Δα of −10° or more, 10° or less with respect to the plane orientation of an arbitrarily designated crystalline plane (1a) that is inclined 50° or more, 90° or less with respect to a plane (1c), being either the (0001) plane or the (000 1) plane, through the arbitrary point. This enables storing GaN substrates whose principal-face plane orientation is other than (0001) or (000 1), making available GaN substrates with which semiconductor devices of favorable properties can be manufactured.
A GaN substrate stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, the GaN substrate having opposite sides encompassed by a peripheral edge, one of said opposite sides being a planar first principal face and the other of said opposite sides being a second principal face, said first principal face having an average roughness Ra of not greater than 20 nm and being of plane orientation having, in an arbitrary point along the first principal face and separated at least 3 mm from said peripheral edge, an off-inclination angle of between −10° and 10°, inclusive, with respect to an arbitrarily designated crystalline plane, through said arbitrary point, of plane orientation inclined between 50° and 90°, inclusive, with respect to either the (0001) plane or the (000 1) plane, and said second principal face having an average roughness Ra of not greater than 20 μm.
A GaN substrate stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, the GaN substrate having opposite sides encompassed by a peripheral edge, one of said opposite sides being a planar first principal face of plane orientation having, in an arbitrary point along the first principal face and separated at least 3 mm from said peripheral edge, an off-inclination angle of between −10° and 10°, inclusive, with respect to an arbitrarily designated {20 2 1} crystalline plane through said arbitrary point.
A GaN substrate stored within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, the GaN substrate having opposite sides encompassed by a peripheral edge, one of said opposite sides being a planar first principal face of plane orientation having, in an arbitrary point along the first principal face and separated at least 3 mm from said peripheral edge, an off-inclination angle of between −10° and 10°, inclusive, in a <1 2 10> direction with respect to an arbitrarily designated {20 2 1} crystalline plane through said arbitrary point, and of between −10° and 10°, inclusive, in a direction perpendicular to a <20 2 1> direction and to a <1 2 10> direction.
Dependencies are inferred from the claim text.