US 8,772,783 B2Granted

Display device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsMisako Hirosue, Masahiro Katayama, Shunpei Yamazaki

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Abstract

The invention provides a technique to manufacture a display device with high image quality and reliability at low cost with high yield. According to the invention, a spacer is provided over a pixel electrode layer in a pixel region. Moreover, a surface of an insulating layer which functions as a partition which covers the periphery of the pixel electrode layer is formed at a high position from the surface of the pixel electrode due to stacked layers under the insulating layer. These spacer and insulator which function as a spacer support a mask used for selectively forming a light emitting material over a pixel electrode layer, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection of the mask. Accordingly, such a damage as a crack does not occur in the pixel electrode layer which results in having no defect in shape. Therefore, a display device which performs a high resolution display with high reliability can be manufactured.

Claims10

Dependent claims

A display device comprising:

a pixel comprising:
a substrate;
a semiconductor layer over the substrate;
a gate insulating layer over the semiconductor layer;
a gate electrode layer over the gate insulating layer;
an insulating layer over the gate electrode layer;
a source electrode layer or a drain electrode layer over the insulating layer;
a first electrode layer in contact with the source electrode layer or the drain electrode layer over the insulating layer;
an insulator covering and being in contact with the insulating layer, the source electrode layer or the drain electrode layer, and a portion of the first electrode layer;
an electroluminescent layer over and in contact with a first surface of the first electrode layer and the insulator;
and
a second electrode layer over and in contact with the electroluminescent layer and the insulator,
wherein the insulator has a first projection portion over a region where the source electrode layer or the drain electrode layer overlaps with the gate electrode layer,
wherein the insulator has a second projection portion over the source electrode layer or the drain electrode layer, wherein the second projection portion does not overlap with the gate electrode layer,
wherein a height of the first projection portion from a surface of the substrate is higher than a height of the second projection portion from the surface of the substrate;
wherein the insulator covers a periphery of the first electrode layer, and
wherein the insulator crosses over the first surface of the first electrode layer parallel to a short side of the first surface of the first electrode layer in two places so that the insulator has a first aperture, a second aperture and a third aperture overlapping with the first surface of the first electrode layer.

14 more elements

A display device comprising:

a pixel comprising:
a substrate;
a thin film transistor including a semiconductor layer, a gate electrode layer and a gate insulating layer between the semiconductor layer and the gate electrode layer over the substrate;
an insulating layer over the thin film transistor;
a source electrode layer or a drain electrode layer over the insulating layer;
a first electrode layer in contact with the source electrode layer or the drain electrode layer over the insulating layer;
an insulator covering and being in contact with the insulating layer, the source electrode layer or the drain electrode layer, and a portion of the first electrode layer;
an electroluminescent layer over and in contact with a first surface of the first electrode layer and the insulator;
and
a second electrode layer over and in contact with the electroluminescent layer and the insulator,
wherein the insulator has a first projection portion over a region where the source electrode layer or the drain electrode layer overlaps with the gate electrode layer,
wherein the insulator has a second projection portion over the source electrode layer or drain electrode layer, wherein the second projection portion does not overlap with the gate electrode layer,
wherein a height of the first projection portion from a surface of the substrate is higher than a height of the second projection portion from the surface of the substrate;
wherein the insulator covers a periphery of the first electrode layer, and
wherein the insulator crosses over the first surface of the first electrode layer parallel to a short side of the first surface of the first electrode layer in two places so that the insulator has a first aperture, a second aperture and a third aperture overlapping with the first surface of the first electrode layer.

12 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/240,568Filed 3 Oct 2005
Priority: JP 2004-30080714 Oct 2004
Published: US 2006/0081844 A120 Apr 2006
Granted: 8 Jul 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 86/00
Integrated devices formed in or on insulating or conducting substrates
H10D 86/0241
Of multiple TFTs: using liquid deposition, e.g. printing
H10F 39/8023
Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes: disposition of the elements in pixels, e.g. smaller elements…
H10K 59/122
Active-matrix OLED [AMOLED] displays: pixel-defining structures or layers, e.g. banks

Family

US 2006/0081844 A1Pre-grant publication · published 20 Apr 2006
US 8,772,783 B2This patent

From the US filing history. Foreign family members aren’t listed.

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