P-type semiconductor material and semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYoshinobu Asami, Riho Kataishi, Erumu Kikuchi
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Abstract
An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoOy (2<y<3)) having an intermediate composition between molybdenum dioxide and molybdenum trioxide. For example, a semiconductor device is formed using a molybdenum oxide material containing molybdenum trioxide (MoO3) as its main component and MoOy (2<y<3) at 4% or more.
Claims16
A semiconductor material comprising:
- molybdenum trioxide;
- and
- molybdenum oxide (MoOy (2<y<3)) having an intermediate composition between molybdenum dioxide and molybdenum trioxide,
- wherein the semiconductor material has p-type conductivity.
A semiconductor device comprising:
- a silicon substrate;
- an oxide semiconductor layer over one surface of the silicon substrate;
- a first electrode over the oxide semiconductor layer;
- an impurity region on the other surface of the silicon substrate;
- and
- a second electrode on the impurity region,
- wherein the oxide semiconductor layer comprises molybdenum oxide (MoOy (2<y<3)) having an intermediate composition between molybdenum dioxide and molybdenum trioxide, and
- wherein the silicon substrate has n-type conductivity and the oxide semiconductor layer has p-type conductivity.
A semiconductor device comprising:
- a silicon substrate;
- a first silicon semiconductor layer over one surface of the silicon substrate;
- an oxide semiconductor layer over the first silicon semiconductor layer;
- a first electrode over the oxide semiconductor layer;
- a second silicon semiconductor layer on the other surface of the silicon substrate;
- a third silicon semiconductor layer on the other surface of the silicon substrate, with the second silicon semiconductor layer therebetween;
- and
- a second electrode on the third silicon semiconductor layer,
- wherein the oxide semiconductor layer comprises molybdenum oxide (MoOy (2<y<3)) having an intermediate composition between molybdenum dioxide and molybdenum trioxide, and
- wherein the silicon substrate has n-type conductivity and the oxide semiconductor layer has p-type conductivity.
Dependencies are inferred from the claim text.