Organic electroluminescent display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Yasuyuki Arai
Life of this patent
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Abstract
An organic EL display device of active matrix type wherein insulated-gate field effect transistors formed on a single-crystal semiconductor substrate are overlaid with an organic EL layer; characterized in that the single-crystal semiconductor substrate (413 in FIG. 4) is held in a vacant space (414) which is defined by a bed plate (401) and a cover plate (405) formed of an insulating material, and a packing material (404) for bonding the bed and cover plates; and that the vacant space (414) is filled with an inert gas and a drying agent, whereby the organic EL layer is prevented from oxidizing.
Claims9
A goggle type display device comprising:
- first and second light emitting devices, each of which includes a single crystal semiconductor substrate;
- first and second insulated gate field effect transistors provided on the single crystal semiconductor substrate;
- a field oxide film isolates the first insulated gate field effect transistor from the second insulated gate field effect transistor;
- an EL layer comprising an organic material provided over the insulated gate field effect transistors;
- color filters over the EL layer;
- a source wiring line electrically connected to the first insulated gate field effect transistor;
- a passivation film comprising silicon nitride over the EL layer;
- a first plate and a second plate formed of an insulating material;
- a first lens corresponding to the second plate of the first light emitting device;
- and
- a second lens corresponding to the second plate of the second light emitting device,
- wherein the EL layer emits a white light, and
- wherein the source wiring line and the field oxide film overlap each other.
A goggle type display device comprising:
- first and second light emitting devices, each of which includes a single crystal semiconductor substrate;
- first and second insulated gate field effect transistors provided on the single crystal semiconductor substrate;
- a field oxide film isolates the first insulated gate field effect transistor from the second insulated gate field effect transistor;
- a pixel electrode over the insulated gate field effect transistors;
- an EL layer comprising an organic material provided over the pixel electrode;
- color filters over the EL layer;
- a source wiring line electrically connected to the first insulated gate field effect transistor;
- a passivation film comprising silicon nitride over the EL layer;
- a first plate and a second plate formed of an insulating material;
- a first lens corresponding to the second plate of the first light emitting device;
- and
- a second lens corresponding to the second plate of the second light emitting device,
- wherein the EL layer emits a white light, and
- wherein the source wiring line and the field oxide film overlap each other.
Dependencies are inferred from the claim text.