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US 8,772,765 B2Granted
Electroluminescent organic transistor
AssigneeE.T.C. S.R.L.
InventorsRaffaella Capelli, Michele Muccini
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Abstract
An electroluminescent organic transistor is described. The electroluminescent organic transistor has a semiconductor heterostructure constituted by a plurality of layers of semiconductor materials of p-type and n-type, which act, respectively, for the conduction of holes and electrons within the heterostructure, and at least two layers of emitting materials each of which is interposed between, and in direct contact with, one of the layers of p-type semiconductor material and another one of the layers of n-type semiconductor material.
Claims7
An electroluminescent organic transistor, comprising:
- at least one control electrode;
- a semiconductive structure;
- at least one first layer of dielectric material positioned between said at least one control electrode and said semiconductive structure;
- at least one source electrode suitable for injecting charges of a first type in said semiconductive structure;
- and
- at least one drain electrode suitable for injecting charges of a second type in said semiconductive structure, wherein
- said semiconductive structure comprises at least one layer of p-type semiconductor material, at least one layer of n-type semiconductor material and at least two layers of emitting material, wherein each layer of the at least two layers of emitting material directly contacts one layer of the at least one layer of p-type semiconductor material and one layer of the at least one layer of n-type semiconductor material.
4 more elements
Dependencies are inferred from the claim text.