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US 8,772,752 B2Granted
Semiconductor device
AssigneesSemiconductor Energy Laboratory Co., Ltd., Sharp Kabushiki Kaisha
InventorsHidekazu Miyairi, Atsushi Hirose, Yoshitaka Yamamoto, Tomohiro Kimura
Life of this patent
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Abstract
An object is to prevent light leakage caused due to misregistration even when the width of a black matrix layer is not expanded to a designed value or larger. One embodiment of the present invention is a semiconductor device including a single-gate thin film transistor in which a first semiconductor layer is sandwiched between a bottom-gate electrode and a first black matrix layer. The first semiconductor layer and the first black matrix layer overlap with each other.
Claims6
A semiconductor device comprising:
- a first wiring;
- and
- a second wiring intersecting the first wiring,
- wherein a portion where the first wiring and the second wiring intersect each other includes a first insulating film formed over the first wiring, a first semiconductor layer formed over the first insulating film, a second insulating film formed over the first semiconductor layer, and the second wiring formed over the second insulating film,
- wherein the second wiring is formed of a first black matrix layer, and
- wherein the first black matrix layer and the first semiconductor layer overlap with each other.
3 more elements
Dependencies are inferred from the claim text.