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US 8,772,749 B2Granted
Bottom electrodes for use with metal oxide resistivity switching layers
AssigneeSanDisk 3D LLC
InventorsDeepak Chandra Sekar, Franz Kreupl, Raghuveer S. Makala
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Abstract
In a first aspect, a metal-insulator-metal (MIM) stack is provided that includes (1) a first conductive layer comprising a silicon-germanium (SiGe) alloy; (2) a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer; and (3) a second conductive layer formed above the resistivity-switching layer. A memory cell may be formed from the MIM stack. Numerous other aspects are provided.
Claims25
A device comprising:
- a metal-insulator-metal (MIM) stack comprising:
- a first conductive layer comprising a silicon-germanium (SiGe) alloy;
- a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer;
- and
- a second conductive layer formed above the resistivity-switching layer;
- and
- a diode coupled to and disposed above or below the MIM stack.
4 more elements
A method of forming a device, the method comprising:
- forming a metal-insulator-metal (MIM) stack comprising:
- forming a first conductive layer comprising a silicon-germanium (SiGe) alloy;
- forming a resistivity-switching layer comprising a metal oxide layer above the first conductive layer;
- and
- forming a second conductive layer above the resistivity-switching layer;
- and
- forming a diode coupled to and disposed above or below the MIM stack.
4 more elements
A method of forming a memory cell comprising:
- forming a metal-insulator-metal (MIM) stack having:
- a first conductive layer comprising a silicon-germanium (SiGe) alloy;
- a resistivity-switching layer comprising a metal oxide layer formed above the first conductive layer;
- and
- a second conductive layer formed above the resistivity-switching layer;
- and
- forming a steering element coupled to and disposed above or below the MIM stack.
4 more elements
Dependencies are inferred from the claim text.