Ion implantation method and ion implantation apparatus

An ion implantation apparatus which reciprocally scans an ion beam, mechanically scans a wafer in a direction perpendicular to a beam scanning direction, and implants ions into the wafer, comprising:

• a controller that fixes both a beam scanning frequency and a beam scanning amplitude and realizes desired ion implantation amount distribution and ion implantation amount for each implantation regions in a case where the wafer is divided into a plurality of implantation regions in a mechanical scanning direction, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, and, on the basis thereof, an ion implantation amount in the wafer is controlled, in order to correct non-uniformity in the wafer surface in other semiconductor manufacturing processes,
• wherein the controller controls an ion implantation amount distribution for each of the implantation regions by changing and controlling the beam scanning speed on the basis of a speed pattern calculated through variable setting of the beam scanning speed corresponding to the ion implantation amount distribution for each of the implantation regions, and controls the ion implantation amount for each of the implantation regions and makes a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions constant by setting a wafer mechanical scanning speed so as to correspond to each of the implantation regions and controlling the wafer mechanical scanning speed for each of the implantation regions.