Analysis apparatus and analysis method
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHajime Kimura, Shunsuke Kiyomura
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Abstract
A compound contained in a sample is analyzed more accurately. Provided is an analysis method using TOF-SIMS in which first spectral data is obtained by irradiating the sample with a first primary ion, second spectral data is obtained by irradiating the sample with a second primary ion, and a surface of the sample is etched by an ion and then the surface of the sample is irradiated with the first primary ion or the second primary ion. The first primary ion is more likely to break a molecular structure of a molecule contained in the sample than the second primary ion.
Claims15
An analysis apparatus comprising:
- a first ion source, the first ion source being configured to irradiate a sample with a first primary ion;
- a second ion source, the second ion source being configured to etch the sample in a depth direction and to irradiate the sample with a second primary ion;
- and
- a detector, the detector being configured to obtain first mass spectral data and to obtain second mass spectral data at the same time.
An analysis method using TOF-SIMS, comprising the steps of:
- obtaining first mass spectral data by irradiating a sample with a first primary ion;
- obtaining second mass spectral data by irradiating the sample with a second primary ion;
- and
- evaluating components of the sample by comparing the first mass spectral data with the second mass spectral data,
- wherein a first number of fragment peaks of the first mass spectral data is larger than a second number of fragment peaks of the second mass spectral data, and
- wherein the obtaining the first mass spectral data and the obtaining the second mass spectral data are performed at the same time.
An analysis method using TOF-SIMS, comprising the steps of:
- obtaining first mass spectral data by irradiating a sample with a first primary ion;
- obtaining second mass spectral data by irradiating the sample with a second primary ion;
- etching a surface of the sample by an ion and then irradiating the surface of the sample with the first primary ion or the second primary ion;
- and
- evaluating components of the sample by comparing the first mass spectral data with the second mass spectral data,
- wherein a first number of fragment peaks of the first mass spectral data is larger than a second number of fragment peaks of the second mass spectral data.
An analysis method using TOF-SIMS, comprising the steps of:
- obtaining first spectral data by irradiating a sample with a first primary ion;
- obtaining second spectral data by irradiating the sample with a second primary ion;
- etching a surface of the sample by an ion including the same element as the second primary ion;
- and
- evaluating components of the sample by comparing the first mass spectral data with the second mass spectral data,
- wherein a first number of fragment peaks of the first mass spectral data is larger than a second number of fragment peaks of the second mass spectral data.
Dependencies are inferred from the claim text.