CCD-based multi-transistor active pixel sensor array
AssigneeLife Technologies Corporation
InventorsKeith Fife, Mark Milgrew
Life of this patent
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Abstract
A floating electrode is used to detect ions in close proximity to the electrode. The electrode is charge coupled to other electrodes and to other transistors to form a pixel that can be placed into an array for addressable readout. It is possible to obtain gain by accumulating charge into another electrode or onto a floating diffusion (FD) node or directly onto the column line. It is desirable to achieve both a reduction in pixel size as well as increase in signal level. To reduce pixel size, ancillary transistors may be eliminated and a charge storage node with certain activation and deactivation sequences may be used.
Claims26
An ion sensitive (IS) accumulation pixel circuit to detect a chemical or a bio-chemical reaction, comprising:
- a readout circuit;
- an IS electrode;
- at least two electrodes charge coupled to the IS electrode;
- and
- a floating diffusion node configured to convert an accumulated charge from the chemical or the bio-chemical reaction to a corresponding voltage, wherein the floating diffusion node is coupled to the readout circuit.
A pixel array to detect a chemical or a bio-chemical reaction, comprising at least two IS accumulation pixel circuits, wherein each IS accumulation pixel circuit further comprises:
- a readout circuit;
- an IS electrode;
- at least two electrodes charge coupled to the IS electrode;
- and
- a floating diffusion node configured to convert an accumulated charge from the chemical or the bio-chemical reaction to a corresponding voltage;
- wherein the floating diffusion node is coupled to the readout circuit.
An ion sensitive (IS) accumulation pixel circuit to detect a chemical or a bio-chemical reaction, comprising:
- an IS electrode;
- at least two electrodes charge coupled to the IS electrode;
- a floating diffusion node configured to convert an accumulated charge from the chemical or the bio-chemical reaction to a corresponding voltage;
- a reset transistor, having a source coupled to the floating diffusion node and a drain coupled to a fixed voltage;
- and
- a transfer transistor, having a drain coupled to the source of the reset transistor.
A pixel array to detect a chemical or a bio-chemical reaction, comprising:
- at least two ion sensitive accumulation pixel circuits, each comprising:
- an IS electrode;
- at least two electrodes charge coupled to the IS electrode;
- a floating diffusion node configured to convert an accumulated charge from the chemical or the bio-chemical reaction to a corresponding voltage;
- a reset transistor, having a source coupled to the floating diffusion node and a drain coupled to a fixed voltage;
- and
- a transfer transistor, having a drain coupled to the source of the reset transistor;
- and
- a readout circuit, comprising:
- a source follower transistor with a gate coupled to sources of the at least two ion sensitive accumulation pixel circuits;
- and
- a row selection transistor with a gate coupled to a row line, a drain coupled to a source of the source follower transistor, and a source coupled to a column line.
An ion sensitive (IS) accumulation pixel circuit, comprising:
- an IS electrode;
- at least two electrodes charge coupled to the IS electrode;
- a floating diffusion node configured to convert an accumulated charge from the chemical or the bio-chemical reaction to a corresponding voltage;
- and
- a transfer transistor, having a drain coupled to the floating diffusion node.
A pixel array, comprising:
- at least two ion sensitive accumulation pixel circuits, each comprising:
- an IS electrode;
- at least two electrodes charge coupled to the IS electrode;
- a floating diffusion node configured to convert an accumulated charge from the chemical or the bio-chemical reaction to a corresponding voltage;
- and
- a transfer transistor, having a drain coupled to the floating diffusion node;
- and
- a readout circuit, comprising:
- a reset transistor with a source coupled to the drain of the transfer transistor;
- a source follower transistor with a gate coupled to the drain of the transfer transistor;
- and
- a row selection transistor with a gate coupled to a row line, a drain coupled to the source of the source follower transistor, and a source coupled to a column line.
Dependencies are inferred from the claim text.