Single-cap via-in-pad and methods for forming thereof
AssigneeMarvell International Ltd.
InventorChien Te Chen
Life of this patent
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AssigneeMarvell International Ltd.
InventorChien Te Chen
Estimating the term…
Methods for the formation of single-cap VIPs in a substrate are described herein. The methods may include initially providing a substrate having a first and a second side, the first side being opposite of the second side. A via may then be constructed in the substrate, the via being formed within a via hole that extends from the first side to the second side of the substrate, the formed via having a first end located at the first side of the substrate, and a second end opposite the first end located at the second side of the substrate. A selective deposition may be performed of a conductive material on the second end of the via to form a conductive pad directly on the via on the second side of the substrate without depositing the conductive material onto the first side of the substrate.
An apparatus, comprising:
A method, comprising:
Dependencies are inferred from the claim text.