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US 8,772,628 B2Granted
High performance, high bandgap, lattice-mismatched, GaInP solar cells
AssigneeAlliance for Sustainable Energy, LLC
InventorsMark W. Wanlass, Jeffrey J. Carapella, Myles A. Steiner
Life of this patent
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Abstract
High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.
Claims18
A method of fabricating a high bandgap GaInP photovoltaic converter, comprising:
- providing a crystalline growth structure having a growth surface that has a lattice constant which matches a relaxed lattice constant of a GaInP alloy that has a bandgap greater than that of Ga0.51In0.49P, wherein the crystalline growth structure comprises a graded GaAsP structure with a base surface having a lattice constant matching that of GaAs and where the growth surface comprises a GaAs1-xPx alloy;
- growing a front contact layer on the growth surface;
- growing a GaInP photovoltaic cell on the front contact layer, the GaInP photovoltaic cell having a relaxed lattice constant matching the lattice constant of the growth surface;
- and
- growing a back contact layer on the GaInP photovoltaic cell.
2 more elements
Dependencies are inferred from the claim text.