US 8,772,623 B2 · Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Abstract

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Claims23

Dependent claims

A monolithic, multi-bandgap, photovoltaic converter, comprising:

a first subcell comprising GaInAs(P) with a first bandgap and a first lattice constant;
a second subcell comprising GaInAs(P) with a second bandgap and a second lattice constant, wherein the second bandgap is less than the first bandgap and the second lattice constant is greater than the first lattice constant, and further, wherein the second lattice constant is equal to a lattice constant of a InAsyP1-y alloy with a bandgap greater than the first bandgap;
and
a lattice constant transition material positioned between the first subcell and the second subcell, said lattice constant transition material comprising InAsyP1-y alloy with a lattice constant that changes gradually from the first lattice constant to the second lattice constant.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

13/664,142Filed 30 Oct 2012 · division

Published

US 2013/0112244 A19 May 2013

Granted

8 Jul 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10F 19/31
Comprising thin-film photovoltaic cells: having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
H10F 10/142
Photovoltaic cells having only PN homojunction potential barriers: comprising multiple PN homojunctions, e.g. tandem cells
H10F 10/1425
Comprising multiple PN homojunctions, e.g. tandem cells: inverted metamorphic multi-junction [IMM] photovoltaic cells
H10F 19/20
Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic…

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Life of this patent

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Life of this patent

Abstract

Claims23