Doped tin tellurides for thermoelectric applications
AssigneeBASF SE
InventorFrank Haass
Life of this patent
Estimating the term…
Abstract
The p- or n-conductive semiconductor material comprises a compound of the general formula (I) SnaPb1-a-(x1+ . . . +xn)A1x1 . . . Anxn(Te1-p-q-rSepSqXr)1+z (I) where 0.05<a<1 n≧1 where n is the number of chemical elements different than Sn and Pb in each case independently 1 ppm≦x1 . . . xn≦0.05 A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Mg, Ca, Y, Ti, Zr, Hf, Nb, Ta, Cr, Mn, Fe, Cu, Ag, Au, Ga, In, Tl, Ge, Sb, Bi X is F, Cl, Br or I 0≦p≦1 0≦q≦1 0≦r≦0.01 −0.01≦z≦0.01 with the condition that p+q+r≦1 and a+x1+ . . . +xn≦1.
Claims15
A p- or n-conductive semiconductor material comprising a compound of formula (I)
- SnaPb1-a-(x1+ . . . +xn)A1x1 . . . Anxn(Te1-p-q-rSepSqXr)1+z (I),
- wherein
- 0.2≦a≦0.75;
- n is ≧2, where n is a number of chemical elements different than Sn and Pb;
- in each case independently
- 0.001≦x1, x2, . . . xn≦0.05;
- A1, A2, . . . An are different from one another, A1 is selected from the group consisting of Ti, Zr, Hf, Mn, Ag, and Ge, and A2, . . . An are selected from the group consisting of Ti, Zr, and Hf;
- X is F, Cl, Br, or I;
- 0≦p≦1;
- 0≦q≦1;
- 0≦r≦0.01;
- and
- −0.01≦z≦0.01,
- with the condition that a+x1+x2 . . . +xn<1 and the sum of x1 . . . xn is in the range of 0.002 to 0.1;
- and
- wherein p-type condition does not switch to n-type condition with rising temperature.
Dependencies are inferred from the claim text.