CVD precursors
AssigneeDow Corning Corporation
InventorXiaobing Zhou
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Abstract
A method of producing silicon containing thin films by the thermal polymerization of a reactive gas mixture bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof. The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and/or stressors in semiconductor devices.
Claims12
A method for producing silicon containing films on a substrate wherein the method comprises the thermal polymerization of a reactive gas mixture comprising bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof, wherein the bisaminosilacyclobutane is selected from
- where each R1, R2, R3, R4, R5 and R6 is independently selected from hydrogen and monovalent hydrocarbon group having 1 to 6 carbons and where m, n have a value of 0 to 10.
A composition comprising Bis(pyrrolidino)silacyclobutane.
Dependencies are inferred from the claim text.