Method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-kwan Yu, Dong-suk Shin, Pan-kwi Park, Ki-eun Kim
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes providing a substrate having a gate structure, a source region, and a drain region formed thereon, and the gate structure includes a gate insulating layer and a gate electrode. The method also includes forming a first stress layer on the substrate, removing the first stress layer, and forming a second stress layer on the substrate.
Claims18
A method of manufacturing a semiconductor device, the method comprising:
- providing a substrate having a gate structure, a source region, and a drain region formed thereon, the gate structure including a gate insulating layer and a gate electrode;
- forming a first stress layer on the substrate to cover the gate structure, the source region, and the drain region;
- removing the first stress layer;
- and
- forming a second stress layer on the substrate,
- wherein removing the first stress layer includes removing substantially an entirety of the first stress layer such that the second stress layer covers the gate structure, the source region, and the drain region.
A method of manufacturing a semiconductor device, the method comprising:
- providing a substrate having a gate electrode, a source region, and a drain region formed thereon;
- forming an etch stop layer for forming contact plugs that are connected to the source region and the drain region, respectively, on the substrate, the etch stop layer covering the gate structure, the source region, and the drain region;
- removing the etch stop layer;
- and
- forming an additional etch stop layer on the substrate,
- wherein removing the etch stop layer includes removing substantially an entirety of the etch stop layer such that the additional etch stop layer covers the gate structure, the source region, and the drain region.
A method of manufacturing a semiconductor device, the method comprising:
- providing a substrate having a gate structure, a source region, and a drain region formed thereon, the gate structure including a gate insulating layer and a gate electrode;
- forming a first stress layer on the substrate to cover the gate structure, the source region, and the drain region;
- removing the first stress layer;
- forming a second stress layer on the substrate after removing the first stress layer;
- forming an interlayer insulating layer on the second stress layer;
- and
- forming contact holes in the interlayer insulating layer by using the second stress layer as an etch stop layer,
- wherein removing the first stress layer includes removing substantially an entirety of the first stress layer such that the second stress layer covers the gate structure, the source region, and the drain region.
A method of manufacturing a semiconductor device, the method comprising:
- providing a substrate having a gate structure, a source region, and a drain region formed thereon, the gate structure including a gate insulating layer and a gate electrode;
- forming a first stress layer on the substrate;
- removing an upper thickness portion of the first stress layer such that a remaining thickness portion of first stress layer on the substrate has a predetermined thickness;
- and
- forming a second stress layer substantially covering an entirety of the first stress layer.
Dependencies are inferred from the claim text.