Method for forming interconnection pattern and semiconductor device

A method for forming an interconnection pattern comprising:

• forming an insulating pattern having a side surface on a major surface of a matrix;
• forming a self-assembled film having an affinity with a material of the insulating pattern on the side surface of the insulating pattern;
• and
• forming a conductive layer by depositing a conductive material on a side surface of the self-assembled film,
• the forming the insulating pattern including forming an insulating layer on the major surface if the matrix, forming a mask pattern on the insulating layer, and etching the insulating layer via the mask pattern, and
• the forming the insulating pattern includes making a width of the insulating pattern thinner than a width of the mask pattern while leaving the mask pattern after etching the insulating layer via the mask pattern.