Semiconductor processing method and semiconductor structure
AssigneeNanya Technology Corporation
InventorsDennis J. Pretti, Terrence B. McDaniel
Life of this patent
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Abstract
A semiconductor processing method that can generate a hole with different diameters, comprising: providing first material and second material different from the first material; and utilizing a etching process to etch the first material and the second material to form a hole through the first material and the second material; wherein the etching process has different etching rates for the first material and the second material such that the hole have different diameters. A semiconductor structure corresponding to the above-mentioned method is also disclosed.
Claims12
A semiconductor processing method that can generate a single hole with different diameters, comprising:
- providing first material and second material different from the first material;
- and
- utilizing a single etching process to etch the first material and the second material to form a single hole through the first material and the second material;
- wherein the single etching process has different etching rates for the first material and the second material such that the single hole have different diameters;
- where the single hole includes a second portion, and a third portion under the second portion;
- wherein the third portion has a diameter smaller than the second portion;
- where the second portion touches both the first material and the second material, and the third portion only touches the second material.
A semiconductor structure having a single hole with different diameters, comprising:
- first material;
- second material different from the first material;
- and
- a single hole with different diameters, through the first material and the second material, wherein the single hole is formed by a single etching process etching the first material and the second material, wherein the single etching process has a smaller etching rate for the first material than for the second material;
- where the single hole includes a second portion, and a third portion under the second portion;
- wherein the third portion has a diameter smaller than the second portion;
- where the second portion touches both the first material and the second material, and the third portion only touches the second material.
Dependencies are inferred from the claim text.