Annealing copper interconnects
AssigneeInternational Business Machines Corporation
InventorsCyril Cabral, Jr., Gregory M. Fritz, Christian Lavoie, Conal E. Murray, Kenneth P Rodbell
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Abstract
A method for modifying the chemistry or microstructure of silicon-based technology via an annealing process is provided. The method includes depositing a reactive material layer within a selected proximity to an interconnect, igniting the reactive material layer, and annealing the interconnect via heat transferred from the ignited reactive material layer. The method can also be implemented in connection with a silicide/silicon interface as well as a zone of silicon-based technology.
Claims23
A method for annealing an interconnect, comprising:
- depositing a reactive material layer within a selected proximity to an interconnect, wherein the interconnect is copper or copper-based;
- igniting the reactive material layer;
- and
- annealing the interconnect via heat transferred from the ignited reactive material layer.
A method for modifying a silicide/silicon interface without damaging a metal gate, comprising:
- depositing a reactive material layer within a selected proximity to the silicide/silicon interface;
- igniting the reactive material layer;
- and
- annealing the silicide/silicon interface via heat transferred from the ignited reactive material layer.
A method for annealing a zone of silicon-based technology, comprising:
- depositing a reactive material layer within a selected proximity to a zone of a silicon-based component to be annealed;
- igniting the reactive material layer;
- and
- annealing the zone of the silicon-based component to be annealed via heat transferred from the ignited reactive material layer.
Dependencies are inferred from the claim text.