US 8,772,160 B2 · Method for manufacturing semiconductor element and deposition apparatus

Abstract

An object of the present invention is to provide an apparatus for successive deposition used for manufacturing a semiconductor element including an oxide semiconductor in which impurities are not included. By using the deposition apparatus capable of successive deposition of the present invention that keeps its inside in high vacuum state, and thus allows films to be deposited without being exposed to the air, the entry of impurities such as hydrogen into the oxide semiconductor layer and the layer being in contact with the oxide semiconductor layer can be prevented; as a result, a semiconductor element including a high-purity oxide semiconductor layer in which hydrogen concentration is sufficiently reduced can be manufactured. In such a semiconductor element, off-state current is low, and a semiconductor device with low power consumption can be realized.

Claims12

Dependent claims

A method for manufacturing a semiconductor element comprising the steps of:

transferring a substrate into a load lock chamber;
evacuating the load lock chamber to have a pressure of 10−6 Pa or less;
transferring the substrate into a heating chamber evacuated to have a pressure of 10−8 Pa or less;
performing a heat treatment on the substrate after evacuating the heating chamber to have the pressure of 10−8 Pa or less;
transferring the substrate into a first deposition chamber evacuated to have a pressure of 10−8 Pa or less;
introducing a first gas into the first deposition chamber;
forming a gate insulating film over the substrate;
evacuating the first deposition chamber to have a pressure of 10−8 Pa or less;
transferring the substrate into a second deposition chamber evacuated to have a pressure of 10−8 Pa or less;
introducing a second gas into the second deposition chamber;
forming an oxide semiconductor film over the gate insulating film;
and
evacuating the second deposition chamber to have a pressure of 10−8 Pa or less after forming the oxide semiconductor film.

10 more elements

A method for manufacturing a semiconductor element comprising the steps of:

transferring a substrate into a load lock chamber;
evacuating the load lock chamber to have a pressure of 10−6 Pa or less;
transferring the substrate into a heating chamber evacuated to have a pressure of 10−8 Pa or less;
performing a heat treatment on the substrate after evacuating the heating chamber to have the pressure of 10−8 Pa or less;
transferring the substrate into a first deposition chamber evacuated to have a pressure of 10−8 Pa or less;
introducing a first gas into the first deposition chamber;
forming a gate insulating film over the substrate;
evacuating the first deposition chamber to have a pressure of 10−8 Pa or less;
transferring the substrate into a second deposition chamber evacuated to have a pressure of 10−8 Pa or less;
introducing a second gas into the second deposition chamber;
forming an oxide semiconductor film over the gate insulating film;
evacuating the second deposition chamber to have a pressure of 10−8 Pa or less after forming the oxide semiconductor film;
transferring the substrate into a third deposition chamber evacuated to have a pressure of 10−8 Pa or less;
introducing a third gas into the third deposition chamber;
and
forming a conductive film over the oxide semiconductor film.

13 more elements

Dependencies are inferred from the claim text.

Method for manufacturing semiconductor element and deposition apparatus

Life of this patent

Method for manufacturing semiconductor element and deposition apparatus

Life of this patent

Abstract

Claims12