Method of fabricating electrical contact

A method of fabricating an electrical contact, comprising:

• providing a substrate having at least a silicon region;
• forming at least an insulation layer on the substrate, wherein the insulation layer comprises at least a contact hole exposing the silicon region and having sidewalls and a bottom surface;
• forming a metal layer on the sidewalls and the bottom of the contact hole;
• performing an annealing process to form a first metal silicide layer in the silicon region nearby the bottom of the contact hole;
• and
• forming a conductive layer covering the metal layer and filling up the contact hole, wherein the first metal silicide layer is transformed into a second metal silicide layer when forming the conductive layer, wherein a temperature of the annealing process is lower than a temperature applied in a step for forming the conductive layer.