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US 8,772,151 B2Granted
Passivation scheme
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHsien-Wei Chen
Life of this patent
Estimating the term…
Abstract
A method includes forming a passivation layer over an electrically conductive pad. A stress buffer layer is formed over the passivation layer. An opening is formed through the stress buffer layer over the electrically conductive pad wherein the opening does not reach the electrically conductive pad. The stress buffer layer is cured. The opening is extended through the passivation layer to reach the electrically conductive pad after the curing.
Claims20
A method, comprising:
- forming a first passivation layer over an electrically conductive pad;
- forming a second passivation layer over the first passivation layer;
- forming a first opening through the second passivation layer over the electrically conductive pad, wherein the first opening does not reach the electrically conductive pad;
- forming a stress buffer layer over the second passivation layer and in the first opening;
- forming a second opening through the stress buffer layer over the electrically conductive pad, wherein the second opening does not reach the electrically conductive pad;
- curing the stress buffer layer;
- and
- extending the second opening through the first passivation layer to reach the electrically conductive pad after the curing.
5 more elements
A method, comprising:
- forming a first passivation layer over an electrically conductive pad, wherein the electrically conductive pad comprises copper or copper alloy and the passivation layer has a thickness that ranges from 500 Å to 1500 Å;
- forming a second passivation layer over the first passivation layer;
- forming a first opening through the second passivation layer over the electrically conductive pad, wherein the first opening does not reach the electrically conductive pad;
- forming a stress buffer layer comprising polymer over the second passivation layer and the first opening, wherein a bottom surface of the stress buffer layer directly adjoins the first passivation layer;
- forming a second opening through the stress buffer layer over the electrically conductive pad wherein the second opening does not reach the electrically conductive pad;
- curing the stress buffer layer;
- and
- extending the second opening through the first passivation layer to reach the electrically conductive pad by self-aligned etching using the stress buffer layer as a mask after the curing.
5 more elements
A method comprising:
- forming a conductive pad over a first surface of a substrate;
- forming a first passivation layer over the first surface of the substrate;
- forming a second passivation layer over the first passivation layer;
- forming a first opening through the second passivation layer to the first passivation layer;
- forming a first stress buffer layer over the second passivation layer and in the first opening;
- forming a second opening through the first stress buffer layer to the first passivation layer, a first portion of the first buffer layer being between a sidewall of the first opening and a sidewall of the second opening;
- performing a treatment on the first stress buffer layer;
- and
- after performing the treatment on the first stress buffer layer, extending the second opening through the first passivation layer to expose a portion of the conductive pad.
6 more elements
Dependencies are inferred from the claim text.